256K EEPROM (32K x 8-Bit) EEPROM
(V
CC
= 5V ±10%, T
A
= -55
TO
125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
WE Pulse Width
-120
-150
CE Pulse Width
-120
-150
Address Hold Time
-120
-150
Data Setup Time
-120
-150
Data Hold Time
-120
-150
Chip Enable Hold Time
2
-120
-150
Output Enable to Write Setup Time
-120
-150
Output Enable Hold Time
-120
-150
Data Latch Time
4
-120
-150
Write Cycle Time
-120
-150
Byte Load Window
4
-120
-150
Byte Load Cycle
4
-120
-150
Write Start Time
-120
-150
1.
2.
3.
4.
Use this device in a longer cycle than this value.
WE controlled operation.
CE controlled operation.
Not tested.
02.18.02 Rev5
28C256T
S
YMBOL
t
WP 2
200
250
t
CW 3
200
250
--
--
--
--
--
--
--
--
--
--
--
--
--
--
230
280
--
--
100
100
--
--
--
--
--
--
ns
150
150
--
--
ns
75
100
--
--
ns
10
10
--
--
ns
0
0
--
--
ns
0
0
--
--
ns
0
0
--
--
ns
--
--
--
--
ms
--
--
10
10
us
--
--
--
--
us
0.55
0.55
30
30
ns
150
150
--
--
--
--
--
--
M
IN1
T
YP
M
AX
U
NITS
ns
T
ABLE
8. 28C256T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
W
RITE
O
PERATIONS
S
UBGROUPS
9, 10, 11
9, 10, 11
t
AH
9, 10, 11
t
DS
9, 10, 11
t
DH
Memory
9, 10, 11
t
CH
9, 10, 11
t
OES
9, 10, 11
t
OEH
9, 10, 11
t
DL
9, 10, 11
t
WC
9, 10, 11
t
BL
9, 10, 11
t
BLC
9, 10, 11
t
DW
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies
All rights reserved.