28C256T
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
1
PARAMETER
SUBGROUPS
SYMBOL
TYP
MAX
UNITS
MIN
2
WE Pulse Width
-120
-150
CE Pulse Width
-120
-150
9, 10, 11
tWP
ns
200
250
--
--
--
--
3
tCW
200
250
--
--
--
--
Address Hold Time
-120
-150
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
tAH
ns
ns
ns
ns
ns
ns
ns
ms
us
us
ns
150
150
--
--
--
--
Data Setup Time
-120
-150
tDS
75
100
--
--
--
--
Data Hold Time
-120
-150
tDH
tCH
tOES
tOEH
tDL
10
10
--
--
--
--
Chip Enable Hold Time2
-120
-150
0
0
--
--
--
--
Output Enable to Write Setup Time
-120
-150
0
0
--
--
--
--
Output Enable Hold Time
-120
-150
0
0
--
--
--
--
Data Latch Time4
-120
-150
--
--
230
280
--
--
Write Cycle Time
-120
-150
tWC
--
--
--
--
10
10
4
Byte Load Window
tBL
-120
-150
--
--
100
100
--
--
Byte Load Cycle4
-120
-150
tBLC
0.55
0.55
--
--
30
30
Write Start Time
-120
-150
tDW
150
150
--
--
--
--
1. Use this device in a longer cycle than this value.
2. WE controlled operation.
3. CE controlled operation.
4. Not tested.
02.18.02 Rev5
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies
All rights reserved.