28C256T
256K EEPROM (32K x 8-Bit) EEPROM
1
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SUBGROUPS
SYMBOL
MIN
MAX
UNITS
Address Access Time CE = OE = V , WE = V
9, 10, 11
tACC
ns
IL
IH
-120
-150
--
--
120
150
CE to Output Delay OE = V , WE = V
-120
-150
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
tCE
tOE
tOH
tDF
ns
ns
ns
ns
IL
IH
--
--
120
150
OE to Output Delay CE = V , WE = V
IL
IH
-120
-150
0
0
75
75
Output Hold from Address CE = OE = V , WE = V
-120
-150
IL
IH
0
0
--
--
2
OE (CE) High to Output Float CE = V , WE = V
IL
IH
-120
-150
0
0
50
50
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); ref-
erence levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)
1
PARAMETER
SUBGROUPS
SYMBOL
TYP
MAX
UNITS
MIN
Address Setup Time
tAS
ns
-120
-150
0
0
--
--
--
--
9, 10, 11
9, 10, 11
2
CE to Write Setup Time
-120
-150
tCS
ns
ns
ns
0
0
--
--
--
--
9, 10, 11
9, 10, 11
3
WE to Write Setup Time
-120
-150
tWS
0
0
--
--
--
--
9, 10, 11
9, 10, 11
9, 10, 11
3
WE Hold Time
-120
-150
tWH
0
0
--
--
02.18.02 Rev5
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
