28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
(VCC = 3.3V ± 10%, TA =-55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Byte Load Cycle
tBLC
9, 10, 11
µs
-200
-250
1
1
30
30
Data Latch Time2
-200
-250
tDL
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
µs
ns
ns
µs
µs
700
750
-
-
Byte Load Window 2
-200
-250
tBL
100
100
--
--
Time to Device Busy
-200
-250
tDB
tDW
tRP
100
120
--
--
Write Start Time
-200
-250
150
250
--
--
RES to Write Setup Time2
-200
-250
100
100
--
--
V
CC to RES Setup Time 2
tRES
-200
-250
1
1
--
--
1. tWC must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the
internal write operation within this value.
2. Guaranteed by design.
1,2
TABLE 9. 28LV010 MODE SELECTION
MODE
CE
OE
WE
RES
RDY/BUSY
I/O
Read
V
V
V
V
High-Z
High-Z
DOUT
IL
IL
IH
H
Standby
Write
V
X
X
X
High-Z
IH
V
V
V
V
High-Z --> V
D
IL
IH
IL
H
OL
IN
Deselect
Write Inhibit
V
V
V
V
High-Z
High-Z
IL
IH
IH
H
X
X
X
V
X
X
--
--
--
--
IH
V
X
IL
Data Polling
Program
V
V
V
V
V
Data Out (I/O7)
High-Z
IL
IL
IH
H
OL
X
X
X
V
High-Z
IL
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
03.14.03 REV 6
All data sheets are subject to change without notice
6
©2001 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
