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28LV011RT4FE-20 参数 Datasheet PDF下载

28LV011RT4FE-20图片预览
型号: 28LV011RT4FE-20
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 1兆位( 128K ×8位) EEPROM [3.3V 1 Megabit (128K x 8-Bit) EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 19 页 / 305 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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28LV011  
3.3V 1 Megabit (128K x 8-Bit) EEPROM  
1
TABLE 7. 28LV011 AC CHARACTERISTICS FOR READ OPERATION  
(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)  
PARAMETER  
Functional Test  
TEST CONDITIONS  
SUBGROUPS  
SYMBOL  
MIN  
MAX  
UNIT  
Verify Truth Table  
7, 8A, 8B  
9, 10, 11  
All  
Address Access Time  
CE = OE = V , WE = V  
tACC  
ns  
IL  
IH  
-200  
-250  
--  
--  
200  
250  
Chip Enable Access Time  
-200  
-250  
OE = V , WE = V  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
tCE  
tOE  
tOH  
tDF  
ns  
ns  
ns  
ns  
ns  
ns  
IL  
IH  
--  
--  
200  
250  
Output Enable Access Time  
-200  
-250  
CE = V , WE = V  
IL  
IH  
0
0
110  
120  
Output Hold to Address Change CE = OE = V , WE = V  
-200  
-250  
IL  
IH  
0
0
--  
--  
2
Output Disable to High-Z  
CE = V , WE = V  
IL  
IH  
-200  
-250  
CE = OE = V , WE = V  
0
0
50  
50  
IL  
IH  
Output Disable to High-Z  
-200  
-250  
CE = V , WE = V  
tDFR  
IL  
IH  
CE = OE = V , WE = V  
0
0
300  
350  
IL  
IH  
RES to Output Delay 3  
CE = OE = V WE = V  
tRR  
IL  
IH  
-200  
-250  
0
0
525  
550  
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including  
scope and jig); reference levels for measuring timing - 0.8V/1.8V.  
2. tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven.  
3. Guaranteed by design.  
05.28.02 Rev 2  
All data sheets are subject to change without notice  
4
©2002 Maxwell Technologies  
All rights reserved.