欢迎访问ic37.com |
会员登录 免费注册
发布采购

28LV011RPFB-20 参数 Datasheet PDF下载

28LV011RPFB-20图片预览
型号: 28LV011RPFB-20
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 1兆位( 128K ×8位) EEPROM [3.3V 1 Megabit (128K x 8-Bit) EEPROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 19 页 / 305 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
 浏览型号28LV011RPFB-20的Datasheet PDF文件第1页浏览型号28LV011RPFB-20的Datasheet PDF文件第2页浏览型号28LV011RPFB-20的Datasheet PDF文件第3页浏览型号28LV011RPFB-20的Datasheet PDF文件第5页浏览型号28LV011RPFB-20的Datasheet PDF文件第6页浏览型号28LV011RPFB-20的Datasheet PDF文件第7页浏览型号28LV011RPFB-20的Datasheet PDF文件第8页浏览型号28LV011RPFB-20的Datasheet PDF文件第9页  
3.3V 1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
7. 28LV011 AC C
HARACTERISTICS FOR
R
EAD
O
PERATION1
(V
CC
= 3.3V ± 10%, T
A
= -55
TO
+125 °C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Functional Test
Address Access Time
-200
-250
Chip Enable Access Time
-200
-250
Output Enable Access Time
-200
-250
Output Hold to Address Change
-200
-250
Output Disable to High-Z
2
-200
-250
Output Disable to High-Z
-200
-250
RES to Output Delay
3
-200
-250
T
EST
C
ONDITIONS
Verify Truth Table
CE = OE = V
IL
, WE = V
IH
S
UBGROUPS
7, 8A, 8B
9, 10, 11
S
YMBOL
All
t
ACC
--
--
OE = V
IL
, WE = V
IH
9, 10, 11
t
CE
--
--
CE = V
IL
, WE = V
IH
9, 10, 11
t
OE
0
0
CE = OE = V
IL
, WE = V
IH
9, 10, 11
t
OH
0
0
CE = V
IL
, WE = V
IH
CE = OE = V
IL
, WE = V
IH
CE = V
IL
, WE = V
IH
CE = OE = V
IL
, WE = V
IH
CE = OE = V
IL
WE = V
IH
9, 10, 11
t
DF
0
0
9, 10, 11
t
DFR
0
0
9, 10, 11
t
RR
0
0
M
IN
28LV011
M
AX
U
NIT
ns
200
250
ns
200
250
ns
110
120
ns
--
--
ns
50
50
ns
300
350
ns
525
550
Memory
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2.
t
DF
and t
DFR
is defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
05.28.02 Rev 2
All data sheets are subject to change without notice
4
©2002 Maxwell Technologies
All rights reserved.