4 Megabit (512K x 8-Bit) CMOS SRAM
33C408
F
IGURE
1. AC T
EST
L
OAD
T
IMING
W
AVEFORM OF
R
EAD
C
YCLE
(1)
F
IGURE
2. T
IMING
W
AVEFORM OF
R
EAD
C
YCLE
(2)
Read Cycle Notes:
1. WE is high for read cycle.
2. All read cycle timing is referenced form the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not
referenced to V
OH
or V
OL
levels.
4. At any given temperature and voltage condition, t
HZ(max)
is less than t
LZ(min)
both for a given device and
from device to device.
5. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100%
tested.
6. Device is continuously selected with CS = V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention condition is necessary dur-
ing read and write cycle.
04.16.02 REV 8
All data sheets are subject to change without notice
7
©2002 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
