MCC
Micro Commercial Components
TM
omponents
20736 Marilla
Street Chatsworth
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$% !"#
2N6045
NPN
Silicon Power
Darlington Transistor
•
•
•
•
GENERAL DESCRIPTION
Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for
use in low-speed switching and general purpose.
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
TOT
V
CEsat
I
csat
V
BE
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector -emitter saturation voltage
Collector saturation current
Emitter forward voltage
Fall time
I
E
=8A
I
C
=3.0A;
I
B1
=-I
B2
=0.3A;
V
CC
=30V
T
mb
<=25 C
I
C
=8A;
I
B
=0.08A
o
CONDITION
V
BE
=0V
MIN
100
100
8.0
16
75
MAX
UNIT
V
V
A
A
W
TO-220
B
F
Q
T
A
U
1 2
H
3
C
S
4.0
V
A
V
us
K
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
I
BM
P
TOT
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Base current(DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
T
mb
<=25 C
-60
-60
o
CONDITIONS
V
BE
=0V
MIN
MAX
100
100
5
8
0.12
UNIT
V
V
V
A
A
A
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
L
G
N
V
D
PIN 1.
PIN 2.
PIN 3.
J
R
BASE
COLLECTOR
EMITTER
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
75
150
150
W
o
o
C
C
∅
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat1
V
CEsat2
h
FE1
h
FE2
f
T
C
C
t
ON
t
S
t
F
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
DC current gain
DC current gain
Transition frequency at f=1MHz
Collector capacitance at f=1MHz
On times
Turn-off storage time
Fall time
CONDITION
MIN
V
CB
=100V
V
EB
=5V
I
C
=100mA
100
I
C
=3.0A,I
B
=12mA
I
C
=8A,I
B
=80mA
I
C
=3A,V
CE
=4V
1000
I
C
=8A,V
CE
=4V
100
I
C
=0.5A,V
CE
=4V
V
CB
=10V
I
C
=3A,I
B
=0.3A,
V
CC
=30V
I
C
=3A,I
B
=0.3A,
V
CC
=30V
I
C
=3A,I
B
=0.3A,
V
CC
=30V
MAX UNIT
20
uA
2.0
mA
V
2.0
V
4.0
V
20000
MHz
pF
us
us
us
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
Revision:
A
www.mccsemi.com
1 of 2
2011/01/01
MCC [ Micro Commercial Components ]
