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2N7002K 参数 Datasheet PDF下载

2N7002K图片预览
型号: 2N7002K
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用: 晶体晶体管开关光电二极管PC
文件页数/大小: 7 页 / 381 K
品牌: MCC [ Micro Commercial Components ]
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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$%    !"#
2N7002K
Features
Maximum Ratings
@ 25
O
C Unless Otherwise Specified
Symbol
V
DS
I
D
P
D
T
J
T
STG
Rating
Drain-source Voltage
Drain Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
O
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Marking : 72K
ESD Protected up to 2KV (HBM)
N-Channel MOSFET
Rating
60
340
350
-55 to +150
-55 to +150
Unit
V
mA
mW
SOT-23
A
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
Parameter
Drain-Source Breakdown Voltage
(V
GS
=0Vdc, I
D
=10µAdc)
Gate-Threshold Voltage
(V
DS
=V
GS
, I
D
=1
mAdc)
Gate-body Leakage
(V
DS
=0Vdc, V
GS
=f10Vdc)
(V
DS
=0Vdc, V
GS
=f5Vdc)
Zero Gate Voltage Drain Current
(V
DS
=48Vdc, V
GS
=0Vdc)
Drain-Source On-Resistance
(V
GS
=4.5Vdc, I
D
=200mAdc)
(V
GS
=10Vdc, I
D
=500mAdc)
Diode Forward Voltage
(V
GS
=0Vdc, I
S
=300mAdc)
Recovered charge
(
V
GS
=0V, I
S
=300mA,V
R
=25V,)
Min
60
1.0
---
---
---
---
---
---
---
---
---
---
Typ
---
---
---
---
---
---
---
---
30
---
---
---
Max
---
---
f200
f100
1
5.3
5.0
1.5
---
40
30
10
Units
Vdc
Vdc
nAdc
nAdc
uAdc
Vdc
nC







G
D
3
C
B
1.GATE
2. SOURCE
3. DRAIN
1
F
E
2
H
J
I
DSS
r
DS(on)
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
V
SD
Qr
C
iss
C
OSS
C
rSS
(dl
s
/dt=-100A/µS)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=10Vdc,
V
GS
=0Vdc
f=1MHz
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
pF
Switching
t
d(on)
t
d(off)
t
rr
Turn-on Time
Turn-off Time
Reverse
recovery
time
Suggested Solder
Pad Layout
.031
.800
.035
ns
.900
.079
2.000
inches
mm
V
DD
=50 V, R
L
=250Ω,
R
GS
=50Ω,V
GS
=10 V,
R
G
=50Ω
V
GS
=0V, I
S
=300mA,
V
R
=25V,
dl
s
/dt=-100A/µS
---
---
---
---
---
30
10
15
ns
---
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1
of
7
2011/01/01