MCC
•
•
•
•
•
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
2N7002V
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
R
θ
JA
T
J
T
STG
Rating
Drain-source Voltage
Drain-Gate Voltage
Gate-source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
60
60
±20
280
150
833
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Max
---
2.5
±0.1
1
500
---
3.0
2.0
---
50
25
5
Units
Vdc
Vdc
µAdc
µAdc
DIMENSIONS
N-Channel MOSFET
Maximum Ratings @ 25
O
C Unless Otherwise Specified
SOT-563
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)DSS
V
th(GS)
I
GSS
I
DSS
Parameter
Drain-Source Breakdown Voltage*
(V
GS
=0Vdc, I
D
=10µAdc)
Gate-Threshold Voltage*
(V
DS
=V
GS
, I
D
=250µAdc)
Gate-body Leakage*
(V
DS
=0Vdc, V
GS
=±20Vdc)
Zero Gate Voltage Drain Current*
(V
DS
=60Vdc, V
GS
=0Vdc)
(V
DS
=0Vdc, V
GS
=±20Vdc, T
j
=125℃)
On-state Drain Current*
(V
DS
=7.5Vdc, V
GS
=10Vdc)
Drain-Source On-Resistance*
(V
GS
=5Vdc, I
D
=50mAdc)
(V
GS
=10Vdc, I
D
=500mAdc)
Forward Tran Conductance*
(V
DS
=10Vdc, I
D
=200mAdc)
Input Capacitance
V
DS
=25Vdc,
Output Capacitance
V
GS
=0Vdc
Reverse Transfer
f=1MHz
Capacitance
Min
60
1.0
---
---
---
0.5
---
---
80
---
---
---
Typ
70
---
---
---
---
1.0
---
---
---
---
---
---
I
D(ON)
r
DS(on)
Adc
Ω
ms
DIM
A
B
C
D
G
H
K
L
M
INCHES
MIN
.006
.043
.061
.020
.035
.059
.022
.004
.004
.043
.067
.023
.011
.007
0.90
1.50
0.56
0.10
0.10
MAX
.011
.049
.067
MIN
0.15
1.10
1.55
MM
MAX
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
NOTE
g
FS
C
iss
C
OSS
C
rSS
pF
Switching
V
DD
=30Vdc,
V
GEN
=10Vdc
R
L
=150Ω,I
D
=200mA,
t
d(off)
Turn-off Time
R
G
=25Ω
* Pulse test, pulse width≦300μs, duty cycle≦20%
t
d(on)
Turn-on Time
---
---
---
---
20
ns
20
Revision: 1
www.mccsemi.com
2005/01/25
MCC [ Micro Commercial Components ]
