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2N7002W 参数 Datasheet PDF下载

2N7002W图片预览
型号: 2N7002W
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 182 K
品牌: MCC [ Micro Commercial Components ]
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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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2N7002W
Features
Low ON-Resistance
Low Input Capacitance
Low Gate Threshold Voltage
Fast Switching Speed
Low Input/Output Leakage
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
A
D
D
B
G
F
E
S
C
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: K72
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter
Drain-Source-Voltage
Drain-Gate Voltage
Gate-Source-Voltage
R
GS
1.0MΩ
Continuous
Pulsed
Symbol
V
DSS
V
DGR
Value
60
60
±20
±40
115
73
800
200
1.60
Unit
V
V
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
V
GSS
V
Suggested Solder
Pad Layout
r
0.70
Drain Current (Note 1) Continuous
Continuous @ 100+
Pulsed
Total Power Dissipation (Note 1)
Derating above T
A
= 25+
I
D
mA
0.90
1.90
P
D
mW
mW/+
0.65
0.65
Note:
1. Valid provided that terminals are kept at specified ambient
temperature.
2. Pulse width 300µs, duty cycle 2%
www.mccsemi.com
Revision:
A
1of 4
2011/01/01