MCC
)HDWXUHV
•
•
•
omponents
21201 Itasca Street Chatsworth
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MJ413
MJ423
MJ431
High Collector-Emitter Voltage V
CES
=400V
DC Current Gain Specified 3.5A
High Frequency Response to 2.5 MHz
10 Amp
NPN Silicon
Power Transistors
125W
TO-3
E
A
N
C
0D[LPXP5DWLQJV
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance: 1.0 /W junction to case
:
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Symbol
V
CEX
V
CB
V
EB
I
C
Max
400
400
5.0
10
2.0
125
1.0
Unit
Vdc
Vdc
U
D
K
Vdc
Adc
Adc
Watts
W/
H
V
2
1
L
G
B
Total Device Dissipation @T
C
=25
Derate above 25
:
:
I
B
P
D
:
Q
PIN 1.
PIN 2.
CASE.
BASE
EMITTER
COLLECTOR
Figure 1 - Power Derating Curve
P
D
– Power Dissipation(W)
DIMENSIONS
INCHES
MIN
MAX
1.550
REF
-----
1.050
.250
.335
.038
.043
0.55
0.70
.430
BSC
.215
BSC
.440
.480
.665
BSC
-----
.830
.151
.165
1.187
BSC
.131
.188
MM
MIN
39.37
-----
6.35
0.97
1.40
10.92
5.46
11.18
16.89
-----
3.84
30.15
3.33
MAX
REF
26.67
8.51
1.09
1.77
BSC
BSC
12.19
BSC
21.08
4.19
BSC
4.77
NOTE
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
∅
150
50
100
Temperature
°C
Power Dissipation (W) -
Versus
- Temperature
°C
0
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