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MJD32C 参数 Datasheet PDF下载

MJD32C图片预览
型号: MJD32C
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP epitaxial planer Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 590 K
品牌: MCC [ Micro Commercial Components ]
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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$%    !"#
MJD32C
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Electrically similar to popular TIP32 Series
Designed for general purpose amplifier and low speed switching
applications.
o
Maximum Thermal Resistance:
100
C/W Junction to
Ambient
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction Temperature
Storage Temperature
O
Silicon
PNP epitaxial planer
Transistors
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
-100
-100
-5
-3
1.25
150
-65 to +150
Unit
V
V
V
A
W
C
DPAK
J
H
1
O
2
I
3
M
F
E
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CES
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-30mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-1mAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-1mAdc, I
C
=0)
Collector Cutoff Current
(V
CE
=-60Vdc, I
B
=0)
Collector Cutoff Current
(V
CE
=-100Vdc, V
EB
=0)
Emitter Cutoff Current
(V
EB
=-5Vdc, I
C
=0)
DC Current Gain
(I
C
=-1Adc, V
CE
=-4Vdc)
(I
C
=-3Adc, V
CE
=-4Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-3Adc, I
B
=-0.375Adc) (note 1)
Base-Emitter Voltage
(I
C
=-3Adc, V
CE
=-4Vdc ) (note 1)
Transition frequency
(V
CE
=-10Vdc,I
C
=-0.5Adc,f
T
=1KHz)
Min
-100
-100
-5
---
---
---
25
10
---
---
3
Typ
---
---
---
---
---
---
---
---
---
-
---
---
Max
---
---
---
-50
-20
-1
---
50
Units
Vdc
K
V
G
Vdc
Vdc
Q
uAdc
uAdc
mAdc
L
B
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
A
D
BASE
COLLECTOR
EMITTER
V
CE(sat)
V
BE(on)
-1.2
-1.8
---
Vdc
Vdc
MH
Z
f
T
Note:
1.
Pulse Test: PW≤300µs, Duty Cycle≤2%
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
V
INCHES
MIN
MAX
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.023
0.256
0.264
0.201
0.215
0.190
0.236
0.244
0.086
0.094
0.386
0.409
0.114
0.055
0.067
0.063
0.043
0.051
0.000
0.012
0.211
MM
MIN
2.20
0.00
0.66
0.46
6.50
5.10
4.83
6.00
2.18
9.80
6.20
2.39
10.40
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
2.90
1.40
1.60
1.10
0.00
1.30
0.30
1.70
5.35
www.mccsemi.com
Revision:
A
1 of
4
2011/01/01