欢迎访问ic37.com |
会员登录 免费注册
发布采购

MMBTA92 参数 Datasheet PDF下载

MMBTA92图片预览
型号: MMBTA92
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅高压晶体管 [PNP Silicon High Voltage Transistor]
分类和应用: 晶体晶体管开关光电二极管高压
文件页数/大小: 3 页 / 232 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号MMBTA92的Datasheet PDF文件第2页浏览型号MMBTA92的Datasheet PDF文件第3页  
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$%    !"#
MMBTA92
Features
Surface Mount SOT-23 Package
Capable of 300mWatts of Power Dissipation
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking: 2D
O
PNP Silicon High
Voltage Transistor
SOT-23
A
D
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100µAdc, I
C
=0)
Collector Current-Continuous
Collector Cutoff Current
(V
CB
=-200Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=-5Vdc, I
C
=0)
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-10Vdc)
(I
C
=-10mAdc, V
CE
=-10Vdc)
(I
C
=-30mAdc, V
CE
=-10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-20mAdc,I
B
=-2.0mAdc)
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-20Vdc, f=30MHz)
Collector-Base Capacitance
(V
CB
=-20Vdc, I
E
=0, f=1.0MHz)
Min
-300
-300
-5
-300
-250
-100
Max
Units
Vdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
I
CBO
I
EBO
Vdc
Vdc
mAdc
nAdc
G
F
E
C
C
B
B
E
H
nAdc
K
DIMENSIONS
ON CHARACTERISTICS
h
FE
60
100
60
200
DIM
A
B
C
D
E
F
G
H
J
K
V
CE(sat)
V
BE(sat)
-0.2
-0.9
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
C
cb
50
6.0
MHz
pF
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
qJA
PD
556
300
2.4
R
qJA
TJ, Tstg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision: A
1 of 3
2011/01/01