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MMSTA42 参数 Datasheet PDF下载

MMSTA42图片预览
型号: MMSTA42
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小信号晶体管 [NPN Small Signal Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 192 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号MMSTA42的Datasheet PDF文件第2页  
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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MMSTA42
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-small surface mount package
Marking : K3M
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
NPN Small Signal
Transistors
SOT-323
A
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
(1) (3)
Power dissipation
(1)
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=200Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
CE
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=30mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=20mAdc, I
B
=2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=20mAdc, I
B
=2.0mAdc)
Rating
300
300
6.0
200
200
-55 to +150
-55 to +150
Min
300
300
6.0
---
---
Max
---
---
---
100
100
Unit
V
V
V
mA
mW
O
C
O
C
Units
Vdc
Vdc
Vdc
nAdc
nAdc
DIM
A
B
C
D
E
F
G
H
J
K
G
D
C
B
C
B
F
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
H
J
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
NOTE
ON CHARACTERISTICS
(2)
h
FE
25
40
40
---
---
---
---
---
0.5
0.9
---
---
---
Vdc
Vdc
Suggested Solder
Pad Layout
0.70
V
CE(sat)
V
BE(sat)
0.90
1.90
mm
SMALL SIGNALCHARACTERISTICS
Current-Gain-Bandwidth Product
50
---
(V
CE
=20V, f=100MHz, I
C
=10mA)
C
CB
Collector-Base Capacitance
---
3.0
(V
CB
=20V, f=1.0MHz, I
E
=0)
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width<300us, duty cycle<2%
3. When operated within safe operating area constraints.
f
T
MHz
0.65
pF
0.65
www.mccsemi.com
Revision:
A
1 of 2
2011/01/01