MCC
•
•
•
•
omponents
21201 Itasca Street Chatsworth
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Features
Glass passivated chip
Superfast switching time for hight efficiency
Low reverse leakage current
High surge capacity
MUR1010CT
THRU
MUR1020CT
10 Amp Sup er Fast
Gl ass Passivated
Rectifier
100 to 200 Volts
Maximum Ratings
•
•
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
100V
200V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
100V
200V
TO-220AB
B
C
K
PIN
1
2
3
L
M
D
A
E
MUR1010CT MUR1010CT
MUR1020CT MUR1020CT
70V
140V
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
10 A
55 A
T
C
= 125°C
8.3ms, half sine
I
J
N
H H
V
F
0.975V
0.925V
1.25V
1.20V
T
J
= 25°C I
F
= 5A
T
J
= 125°C
T
J
= 25°C I
F
=10A
T
J
= 125°C
A
B
C
D
E
F
G
H
I
J
K
L
M
PIN 1
PIN 3
PIN 2
CASE
MM
14.22
9.65
2.54
5.84
9.65
---
12.70
2.29
0.51
0.30
3.53
3.56
1.14
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
I
R
50uA
500uA
T
J
= 25°C
T
J
= 100°C
I
F
=0.5A, I
r
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
T
rr
C
J
35ns
80pF
INCHES
.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
---
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
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