MCC
Micro Commercial Components
TM
omponents
20736 Marilla
Street Chatsworth
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SS8550-C
SS8550-D
•
•
•
•
•
•
•
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 1.0Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : SS8550
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
C
O
PNP Silicon
Transistors
TO-92
A
E
•
B
E
Min
40
25
6.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
D
B
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=800mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=800mAdc, I
B
=80mAdc)
Base-Emitter Saturation Voltage
(I
C
=800mAdc, I
B
=80mAdc)
Base- Emitter Voltage
(I
E
=1.5Adc)
Transistor Frequency
(I
C
=50mAdc, V
CE
=10Vdc, f=30MHz)
Rank
Range
C
120-200
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
85
40
---
---
---
400
---
0.8
1.2
1.8
---
---
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.096
G
DIMENSIONS
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
SMALL-SIGNAL CHARACTERISTICS
f
T
190
---
MHz
CLASSIFICATION OF H
FE (1)
D
160-300
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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Revision:
A
1 of 2
2011/01/01
MCC [ Micro Commercial Components ]
