MCC
Micro Commercial Components
TM
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
TIP105
TIP106
TIP107
PNP Plastic
Medium-Power
Silicon Transistors
Features
•
•
•
•
•
•
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
High DC Current Gain : h
FE
=2500 (Typ) @ I
C
=4.0Adc
Low Collector-Emitter Saturation Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
TO-220 Compact package
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Rating
Collector-Emitter Voltage
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
Rating
60
80
100
60
80
100
5.0
8.0
15
1.0
80
0.64
-55 to +150
-55 to +150
Min
Max
Maximum Ratings
Symbol
V
CEO
Unit
V
TO-220
B
C
S
Q
T
A
U
1 2
H
K
3
F
V
CBO
Collector-Base Voltage
V
V
A
A
A
W
O
W/ C
O
C
O
C
Units
V
EBO
I
C
I
CP
I
B
P
D
T
J
,
T
STG
Symbol
Emitter-Base Voltage
Collector Current-continuous
Collector Current-peak
Base Current
Collector Dissipation @T
C
=25
O
C
O
Derate above 25 C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Sustaining Voltage
(I
C
=30mAdc, I
B
=0)
TIP105
TIP106
TIP107
Collector Cut-off Current
(V
CE
=30Vdc, I
B
=0)
TIP105
(V
CE
=40Vdc, I
B
=0)
TIP106
(V
CE
=50Vdc, I
B
=0)
TIP107
Collector Cut-off Current
(V
CB
=60Vdc, I
E
=0)
TIP105
(V
CB
=80Vdc, I
E
=0)
TIP106
(V
CB
=100Vdc, I
E
=0)
TIP107
Emitter Cut-off Current
(V
BE
=5.0Vdc, I
C
=0)
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
CEO(SUS)
60
80
100
---
---
---
---
---
---
---
---
---
---
50
50
50
50
50
50
8.0
Vdc
L
G
V
D
J
R
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
I
CEO
uAdc
N
I
CBO
uAdc
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
I
EBO
mAdc
ON CHARACTERISTICS(1)
DC Current Gain
(I
C
=3.0Adc, V
CE
=4.0Vdc)
(I
C
=8.0Adc, V
CE
=4.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=3.0Adc, I
B
=6.0mAdc)
(I
C
=8.0Adc, I
B
=80mAdc)
V
BE(ON)
Base-Emitter On Voltage
(I
C
=8.0Adc,V
CE
=4.0Adc)
hfe
Small-Signal Current Gain
(I
C
=3.0Adc,V
CE
=4.0Vdc,f=1.0MHz)
C
ob
Output Capacitance
(V
CB
=10V, I
E
=0, f=0.1MHz)
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
h
FE(1)
1000
200
---
---
---
4.0
---
20000
---
2.0
2.5
2.8
---
300
----
∅
Vdc
Vdc
---
pF
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision: A
1 of 4
2011/01/01
MCC [ Micro Commercial Components ]
