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TIP116 参数 Datasheet PDF下载

TIP116图片预览
型号: TIP116
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延硅达林顿晶体管 [PNP Epitaxial Silicon Darlington Transistors]
分类和应用: 晶体晶体管达林顿晶体管局域网
文件页数/大小: 2 页 / 367 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号TIP116的Datasheet PDF文件第2页  
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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TIP115
TIP116
TIP117
PNP Epitaxial
Silicon Darlington
Transistors
Features
Gain : h
High DC Current
Maximum Ratings
Symbol
V
CEO
@ V
CE
=4.0V, I
C
=1.0A(Min.)
Low Collector-Emitter Saturation Voltage
Complementary to TIP110/111/112
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Rating
Collector-Emitter Voltage
TIP115
TIP116
TIP117
Rating
60
80
100
60
80
100
5.0
2.0
4.0
50
2.0
50
-55 to +150
-55 to +150
Min
Max
Unit
FE
=1000
TO-220
B
C
S
Q
F
V
V
CBO
Collector-Base Voltage
TIP115
TIP116
TIP117
V
A
T
V
EBO
I
C
I
CP
I
B
P
C
T
J
,
T
STG
Symbl
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation @T
A
=25
O
C
Collector Dissipation @T
C
=25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Sustaining Voltage
(I
C
=30mAdc, I
B
=0)
TIP115
TIP116
TIP117
Collector Cut-off Current
(V
CE
=30Vdc, I
B
=0)
TIP115
(V
CE
=40Vdc, I
B
=0)
TIP116
(V
CE
=50Vdc, I
B
=0)
TIP117
Collector Cut-off Current
(V
CB
=60Vdc, I
E
=0)
TIP115
(V
CB
=80Vdc, I
E
=0)
TIP116
(V
CB
=100Vdc, I
E
=0)
TIP117
Emitter Cut-off Current
(V
BE
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0Adc, V
CE
=4.0Vdc)
(I
C
=2.0Adc, V
CE
=4.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=8.0mAdc)
Base-Emitter On Voltage
(I
C
=2.0Adc,V
CE
=4.0Adc)
Output Capacitance
(V
CB
=10V, I
E
=0, f=0.1MH z)
V
A
A
mA
W
W
O
C
O
C
Units
U
H
K
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
CEO(SUS)
60
80
100
---
---
---
---
---
---
---
---
---
---
2.0
2.0
2.0
1.0
1.0
1.0
2.0
Vdc
L
G
N
V
D
J
R
Equivalent Circuit
C
I
CEO
B
mAdc
R1
I
CBO
mAdc
mAdc

A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
1.Base
2.Collector
3.Emitter

INCHES

.595
.380
.160
.025
.142
.190
.110
.018
.500
.045
.100
.080
.045
.235
------
R2
E
R
1
10
k
R
2
0.6
k



.620
.405
.190
.035
.147
.210
.130
.025
.562
.060
.120
.110
.055
.255
.050
MM

15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.46
12.70
1.14
2.54
2.04
1.14
5.97
-----


15.75
10.29
4.82
0.89
3.73
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
I
EBO
ON CHARACTERISTICS
h
FE(1)
1000
500
---
---
---
---
---
2.5
2.8
200
----
Vdc
Vdc
pF

V
CE(sat)
V
BE(ON)
C
ob
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision: A
1
of 1
2011/01/01