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TIP30C-BP 参数 Datasheet PDF下载

TIP30C-BP图片预览
型号: TIP30C-BP
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0安培互补硅功率晶体管 [1.0 Amp Complementary Silicon Power Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 156 K
品牌: MCC [ Micro Commercial Components ]
 浏览型号TIP30C-BP的Datasheet PDF文件第2页浏览型号TIP30C-BP的Datasheet PDF文件第3页  
MCC
Micro Commercial Components
TM
  omponents
20736
Marilla
Street Chatsworth

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$%    !"#
TIP29,A,B,C(NPN)
TIP30,A,B,C(PNP)
1.0 Amp
Complementary
Silicon Power
Transistors
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Marking: Type Number
R
th(jc)
is 4.167
O
C/W, R
th(ja)
is 62.5
O
C/W
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Rating
Collector-Emitter Voltage
Collector-Base Voltage
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
Rating
40
60
80
100
5.0
1.0
3.0
0.4
30
0.24
-55 to +150
-55 to +150
Max
Unit
V
V
A
A
W
W/
O
C
O
C
O
C
Units
K
F
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EB
I
C
I
B
P
D
T
J
,
T
STG
Symbol
TO-220
B
C
S
Q
T
A
U
1 2
H
3
Emitter-Base Voltage
Collector Current- Continuous
Peak
(1)
Base Current-Continuous
Total power dissipation @T
C
=25
O
C
Derate above 25
O
C
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Sustaining Voltage
(note
2)
(I
C
=30mAdc, I
B
=0)
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
Emitter-Base Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
Collector Cutoff Current
(V
CE
=40V, V
EB
=0)
TIP29, TIP30
(V
CE
=60V, V
EB
=0)
TIP29A, TIP30A
(V
CE
=80V, V
EB
=0)
TIP29B, TIP30B
(V
CE
=100V, V
EB
=0)
TIP29C, TIP30C
Collector Cutoff Current
(V
CE
=30Vdc, I
B
=0)
TIP29, TIP29A, TIP30, TIP30A
(V
CE
=60Vdc, I
B
=0)
TIP29B, TIP29C, TIP30B, TIP30C
Min
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
CEO(SUS)
40
60
80
100
---
---
---
---
---
1.0
Vdc
L
V
D
G
N
J
R
I
EBO
I
CES
mAdc
---
---
---
---
---
---
200
200
200
200
0.3
0.3
uAdc
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
I
CEO
mAdc
ON CHARACTERISTICS
(2)
DC Current Gain
(I
C
=0.2Adc, V
CE
=4.0Vdc)
40
---
----
(I
C
=1.0Adc, V
CE
=4.0Vdc)
15
75
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=1.0Adc, I
B
=125mAdc)
---
0.7
Vdc
V
BE(ON)
Base-Emitter On Voltage
Vdc
(I
C
=1.0Adc,V
CE
=4.0Adc)
---
1.3
f
T
Current-Gain-Bandwidth Product
(note
3)
3.0
---
MH
Z
(I
C
=200mAdc, V
CE
=10Vdc,
f=1.0MH
Z
)
h
fe
Small-Signal Current Gain
20
---
---
(I
C
=0.2Adc, V
CE
=10Vdc, f=1.0KHz )
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.
Pulse Test: Pulse Width=300us, Duty Cycle <2.0%
3.
f
T
=| h
fe
| x f
test
h
FE(1)
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
Revision:
3
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2008/01/01