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128M8 参数 Datasheet PDF下载

128M8图片预览
型号: 128M8
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB : X4,X8 , X16 DDR3 SDRAM [1Gb: x4, x8, x16 DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 181 页 / 8341 K
品牌: MDTIC [ Micon Design Technology Corporation ]
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1Gb : x4, x8, x16 DDR3 SDRAM  
Ele ct rica l Sp e cifica t io n s – IDD Sp e cifica t io n s a n d Co n d it io n s  
Ele ct rica l Sp e cifica t io n s – IDD Sp e cifica t io n s a n d Co n d it io n s  
The following definitions are used within the IDD measurement tables:  
• LOW: VIN VIL(AC) MAX; HIGH: VIN VIH(AC) MIN  
• Stable: Inputs are stable at a HIGH or LOW level  
• Floating: Inputs are VREF = VDDQ/ 2  
• Switching: See Tables 10 and 11  
Ta b le 9:  
IDD Me a su re m e n t Co n d it io n s Re fe re n ce  
Ta b le Nu m b e r  
Me a su re m e n t Co n d it io n s  
Table 13 on page 31  
Table 14 on page 33  
Table 15 on page 35  
Table 16 on page 37  
Table 17 on page 38  
IDD0 and IDD1  
IDD2Ps, IDD2Pf, IDD2Q, IDD2N, IDD3P, and IDD3N  
IDD4R, IDD4W  
IDD5B, IDD6, IDD6ET  
IDD7 (see Table 18 on page 38)  
Ta b le 10:  
De fin it io n o f Sw it ch in g fo r Co m m a n d a n d Ad d re ss In p u t Sig n a ls  
Sw it ch in g fo r Ad d re ss (Ro w /Co lu m n ) a n d Co m m a n d Sig n a ls (CS#, RAS#, CAS#, a n d /o r WE#)  
Address (row/column)  
If not otherwise stated, inputs are stable at HIGH or LOW during 4 clocks and then change to  
the opposite value (Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax Ax . . . )  
Bank address  
If not otherwise stated, the bank addresses should be switched in a similar fashion as the  
row/column addresses  
Command  
(CS#, RAS#, CAS#, WE#)  
Define command background pattern = D D D D D D D D D D D D . . . where:  
D = (CS#, RAS#, CAS#, WE#) = (HIGH, LOW, LOW, LOW)  
D = (CS#, RAS#, CAS#, WE#) = (HIGH, HIGH, HIGH, HIGH)  
If other commands are necessary (ACTIVATE for IDD0 or READ for IDD4R), the background  
pattern command is substituted by the respective CS#, RAS#, CAS#, and WE# levels of the  
necessary command  
Ta b le 11:  
De fin it io n o f Sw it ch in g fo r Da t a Pin s  
Sw it ch in g fo r Da t a Pin s (DQ, DQS, DM)  
Data strobe (DQS)  
Data (DQ)  
Data strobe is changing between HIGH and LOW after every clock cycle  
Data DQ is changing between HIGH and LOW every other data transfer (once per clock) for  
DQ signals, which means that data DQ is stable during one clock  
Data masking (DM)  
No switching; DM must always be driven LOW  
PDF: 09005aef826aa906/Source: 09005aef82a357c3  
1Gb_DDR3_D2.fm - Rev. D 8/1/08 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
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©2006 Micron Technology, Inc. All rights reserved.