MIC281
Micrel
Typical Characteristics
V
DD
= 3.3V; T
A
= 25°C, unless otherwise noted.
2
1.5
MEASUREMENT ERROR (°C)
SUPPLY CURRENT (µA)
1
0.5
0
-0.5
-1
-1.5
-2
100
0
20
40
60
80
REMOTE DIODE TEMPERATURE (°C)
R emote T emperature
Meas urement E rror
400
350
S upply C urrent vs .
T emperature for V
DD
= 3.3V
20
Quies c ent C urrent vs .
C loc k F requenc y in
S hutdown Mode
T 1 open
DAT A = HIG H
QUIESCENT CURRENT (µA)
300
250
200
150
100
50
0
-55 -35 -15 5 25 45 65 85 105 125
TEMPERATURE (°C)
15
10
5
0
0
100
200
300
FREQUENCY (kHz)
400
Quies c ent C urrent vs .
T emperature in S hutdown Mode
30
Quies c ent C urrent vs .
S upply V oltage in S hutdown Mode
10
T 1 open
9
C LK = DAT A = HIG H
8
7
6
5
4
3
2
1
0
2.6
2.8
3.0
3.2
3.4
SUPPLY VOLTAGE (V)
8
6
MEASUREMENT ERROR (°C)
4
2
0
-2
-4
-6
Meas urement E rror vs .
P C B L eakage to +3.3V /G ND
T 1 open
25
C LK = DAT A = HIG H
QUIESCENT CURRENT (µA)
20
15
10
5
0
-55 -35 -15 5 25 45 65 85 105 125
TEMPERATURE (°C)
QUIESCENT CURRENT (µA)
G ND
3.3V
3.6
-8
1x10
6
1x10
7
1x10
8
RESISTANCE FROM T1 (Ω)
1x10
9
R emote T emperature E rror vs .
C apac itanc e on T 1
5
0
-5
-10
-15
-20
E rror Due to Nois e on the B as e
of R emote T rans is tor
7
6
REMOTE TEMP. ERROR (°C)
5
4
3
2
1
0
1
E rror Due to Nois e on the
C ollec tor of R emote T rans is tor
1.6
1.4
TEMPERTURE ERROR (°C)
1.2
1.0
0.8
0.6
0.4
0.2
0
1
25mV
P -P
100mV
P -P
TEMPERATURE ERROR (°C)
10mV
P -P
3mV
P -P
10 100 1k 10k 100k 1M 10M100M
FREQUENCY (Hz)
50mV
P -P
1000
2000
3000
4000
5000
6000
7000
CAPACITANCE (pF)
November 2004
8000
25mV
P -P
10 100 1k 10k 100k 1M 10M100M
FREQUENCY (Hz)
0
5
MIC281
MICREL [ MICREL SEMICONDUCTOR ]
