MCP1403/4/5
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
(1)
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin
PDIP
SOIC
8-Pin
DFN
16-Pin
SOIC
Symbol
Description
1
2
1
2
1
2
NC
IN A
NC
No Connection
Control Input for Output A
No Connection
Ground
—
3
—
3
3
4
GND
GND
NC
—
—
4
—
—
4
5
Ground
6
No Connection
Control Input for Output B
No Connection
No Connection
Output B
7
IN B
NC
—
—
5
—
—
5
8
9
NC
10
11
12
13
14
15
16
—
OUT B
OUT B
VDD
—
6
—
6
Output B
Supply Input
—
7
—
7
VDD
Supply Input
OUT A
OUT A
NC
Output A
—
8
—
8
Output A
No Connection
Exposed Metal Pad
—
PAD
NC
Note 1: Duplicate pins must be connected for proper operation.
3.1
Supply Input (VDD
)
3.4
Outputs A and B
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low-impedance path for
the peak currents that are to be provided to the load.
Outputs A and B are CMOS push-pull output that is
capable of sourcing and sinking 4.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These output also
has a reverse current latch-up rating of 1.5A.
3.2
Control Inputs A and B
3.5
Exposed Metal Pad
The MOSFET driver input is a high-impedance, TTL/
CMOS-compatible input. The input also has hysteresis
between the high and low input levels, allowing them to
be driven from slow rising and falling signals, and to
provide noise immunity.
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
3.3
Ground (GND)
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
© 2007 Microchip Technology Inc.
DS22022B-page 9