MCP1727
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
(Note 1),
V
R
=1.8V for Adjustable Output,
I
OUT
= 1 mA, C
IN
= C
OUT
= 4.7 µF (X7R Ceramic), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
(Note
7)
of
-40°C to +125°C
Parameters
Output Noise
Sym
e
N
Min
—
Typ
2.0
Max
—
Units
µV/√Hz
Conditions
I
OUT
= 200 mA, f = 1 kHz, C
OUT
= 10 µF (X7R Ceramic), V
OUT
=
2.5V
f = 100 Hz, C
OUT
= 10 µF,
I
OUT
= 10 mA,
V
INAC
= 30 mV pk-pk,
C
IN
= 0 µF
I
OUT
= 100 µA, V
OUT
= 1.8V,
V
IN
= 2.8V
I
OUT
= 100 µA, V
OUT
= 1.8V,
V
IN
= 2.8V
Power Supply Ripple Rejection
Ratio
PSRR
—
60
—
dB
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Note 1:
2:
3:
4:
5:
6:
T
SD
ΔT
SD
—
—
150
10
—
—
°C
°C
7:
The minimum V
IN
must meet two conditions: V
IN
≥
2.3V and V
IN
≥
V
OUT(MAX)
+
V
DROPOUT(MAX).
V
R
is the nominal regulator output voltage for the fixed cases. V
R
= 1.2V, 1.8V, etc. V
R
is the desired set point output
voltage for the adjustable cases. V
R
= V
ADJ *
((R
1
/R
2
)+1).
Figure 4-1.
TCV
OUT
= (V
OUT-HIGH
– V
OUT-LOW
) *10
6
/ (V
R
*
ΔTemperature).
V
OUT-HIGH
is the highest voltage measured over the
temperature range. V
OUT-LOW
is the lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of V
OUT
= V
R
+ V
DROPOUT(MAX)
.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Unless otherwise indicated, all limits apply for V
IN
= 2.3V to 6.0V.
Parameters
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8LD 3x3 DFN
θ
JA
—
41
—
°C/W
4-Layer JC51-7
Standard Board with
vias
4-Layer JC51-7
Standard Board
T
J
T
J
T
A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Steady State
Transient
Sym
Min
Typ
Max
Units
Conditions
Thermal Resistance, 8LD SOIC
θ
JA
—
150
—
°C/W
©
2007 Microchip Technology Inc.
DS21999B-page 7
MICROCHIP [ MICROCHIP TECHNOLOGY ]
