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MCP4231-104E/SL 参数 Datasheet PDF下载

MCP4231-104E/SL图片预览
型号: MCP4231-104E/SL
PDF下载: 下载PDF文件 查看货源
内容描述: 7/8位单/双SPI数字电位器具有易失性存储器 [7/8-Bit Single/Dual SPI Digital POT with Volatile Memory]
分类和应用: 转换器电位器数字电位计存储电阻器光电二极管PC
文件页数/大小: 88 页 / 2525 K
品牌: MICROCHIP [ MICROCHIP ]
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MCP413X/415X/423X/425X  
† Notice: Stresses above those listed under “Maximum  
Ratings” may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
those or any other conditions above those indicated in the  
operational listings of this specification is not implied.  
Exposure to maximum rating conditions for extended periods  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings †  
Voltage on VDD with respect to VSS ............... -0.6V to +7.0V  
Voltage on CS, SCK, SDI, SDI/SDO, and  
may affect device reliability.  
SHDN with respect to VSS ...................................... -0.6V to 12.5V  
Voltage on all other pins (PxA, PxW, PxB, and  
SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V  
Input clamp current, IIK  
(VI < 0, VI > VDD, VI > VPP ON HV pins)......................±20 mA  
Output clamp current, IOK  
(VO < 0 or VO > VDD) ..................................................±20 mA  
Maximum output current sunk by any Output pin  
......................................................................................25 mA  
Maximum output current sourced by any Output pin  
......................................................................................25 mA  
Maximum current out of VSS pin .................................100 mA  
Maximum current into VDD pin ....................................100 mA  
Maximum current into PXA, PXW & PXB pins ............±2.5 mA  
Storage temperature ....................................-65°C to +150°C  
Ambient temperature with power applied  
.....................................................................-40°C to +125°C  
Total power dissipation (Note 1) ................................400 mW  
Soldering temperature of leads (10 seconds).............+300°C  
ESD protection on all pins .................................. ≥ 4 kV (HBM),  
.......................................................................... 300V (MM)  
Maximum Junction Temperature (TJ) .........................+150°C  
Note 1: Power dissipation is calculated as follows:  
Pdis = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL)  
© 2008 Microchip Technology Inc.  
DS22060B-page 3