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PIC18F4580-I/PT 参数 Datasheet PDF下载

PIC18F4580-I/PT图片预览
型号: PIC18F4580-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器与ECAN技术, 10位A / D和纳瓦技术 [28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 490 页 / 8912 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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PIC18F2480/2580/4480/4580
28.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR) ................................................... -0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
......................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to V
SS
(Note 2)
......................................................................................... 0V to +13.25V
Total power dissipation
(Note 1)
...............................................................................................................................1.0W
Maximum current out of V
SS
pin ...........................................................................................................................300 mA
Maximum current into V
DD
pin ..............................................................................................................................250 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)......................................................................................................................
±20
mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................. ±20
mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by all ports .......................................................................................................................200 mA
Maximum current sourced by all ports ..................................................................................................................200 mA
Note 1:
Power dissipation is calculated as follows:
Pdis = V
DD
x {I
DD
I
OH
} +
{(V
DD
– V
OH
) x I
OH
} +
∑(V
OL
x I
OL
)
2:
Voltage spikes below V
SS
at the MCLR/V
PP
pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100Ω should be used when applying a “low” level to the MCLR/V
PP
/RE3 pin,
rather than pulling this pin directly to V
SS
.
NOTICE:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
©
2009 Microchip Technology Inc.
DS39637D-page 421