TC623
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum Rat-
ings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at
these or any other conditions above those indicated in the
operation sections of the specifications is not implied. Expo-
sure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage ......................................................5.5V
Input Voltage Any Input .. (GND – 0.3V) to (V
DD
+0.3V)
Package Power Dissipation (T
A
≤
70°C)
Plastic DIP .............................................730mW
SOIC......................................................470mW
Derating Factors
Plastic DIP ............................................8mW/°C
SOIC .....................................................6mW/°C
Operating Temperature
V Version ................................. -40°C to +125°C
E Version ................................... -40°C to +85°C
C Version ...................................... 0°C to +70°C
Storage Temperature.......................... -65°C to +150°C
TC623 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Over Operating Temperature Range, V
DD
= 2.7V to 4.5V, unless otherwise specified.
Symbol
V
DD
I
DD
T
SET
V
OH
V
OL
HYS
Parameter
Supply Voltage Range
Supply Current
Absolute Accuracy
Output Voltage High
Output Voltage Low
Hysteresis
Min
2.7
—
T- 3
0.9 x V
DD
0.8 x V
DD
—
—
—
Typ.
—
150
T ±1
—
—
—
—
—
Max
4.5
250
T+3
—
—
0.1 x V
DD
0.2 x V
DD
-2
Unit
V
µA
°C
V
V
V
V
°C
2.7V
≤
V
DD
≤
4.5V
T = Programmed Temperature
I
OH
= 250µA
I
OH
= 500µA
I
OL
= 500
µA
I
OL
= 1mA
Falling Temperature
Test Conditions
©
DS21441B-page 2
2002 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
