TC911A/TC911B
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the
device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings*
Total Supply Voltage (V
DD
to V
SS
) ........................-18V
Input Voltage .................... V
DD
+ 0.3V) to (V
SS
– 0.3V)
Current Into Any Pin............................................ 10mA
While Operating ...................................... 100μA
Package Power Dissipation (T
A
- 70°C)
Plastic DIP............................................. 730mW
Plastic SOIC .......................................... 470mW
Operating Temperature Range
C Device....................................... 0°C to +70°C
Storage Temperature Range.............. -65°C to +150°C
TC911A AND TC911B ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
S
= ±5V, T
A
= +25°C, unless otherwise indicated.
TC911A
Symbol
V
OS
TCV
OS
Parameter
Input Offset
Voltage
Average Temp.
Coefficient of
Input Offset
Voltage
Average Input
Bias Current
Average Input
Offset Current
Input Voltage
Noise
Common Mode
Rejection Ratio
Common Mode
Voltage Range
Open-Loop
Voltage Gain
Output Voltage
Swing
Closed Loop
Bandwidth
Slew Rate
Power Supply
Rejection Ratio
Operating
Supply Voltage
Range
Quiescent
Supply Current
Min
—
—
—
Typ
5
0.05
0.05
Max
15
0.15
0.15
Min
—
—
—
TC911B
Typ
15
0.1
0.1
Max
30
0.25
0.25
Unit
μV
Test Conditions
T
A
= +25°C
μV/°C
0°C
≤
T
A
≤
+70°C
μV/°C
-25°C
≤
T
A
≤
+85°C
(Note
1)
pA
nA
nA
pA
nA
μV
P-P
μV
P-P
dB
V
dB
V
MHz
R
L
= 10kΩ, V
OUT
= ±4V
R
L
= 10kΩ
Closed Loop Gain = +1
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-25°C
≤
T
A
≤
+85°
T
A
= +25°C
T
A
= +85°C
0.1 to 1Hz, R
S
≤
100Ω
0.1 to 10Hz, R
S
≤
100Ω
V
SS
≤
V
CM
≤
V
DD
- 2.2
I
B
—
—
—
—
—
—
—
110
V
SS
115
V
SS
+ 0.3
—
—
112
±3.3
6.5
—
—
—
—
5
—
0.65
11
116
—
120
—
1.5
2.5
—
—
—
350
70
3
4
20
1
—
—
—
V
DD
– 2
—
V
DD
– 0.9
—
—
—
±8
16
600
—
—
—
—
—
—
—
105
V
SS
110
V
SS
+ 0.3
—
—
105
±3.3
6.5
—
—
—
—
10
—
0.65
11
110
—
120
—
1.5
2.5
—
—
—
—
120
4
6
40
1
—
—
—
V
DD
– 2
—
V
DD
– 0.9
—
—
—
±8
16
800
I
OS
e
N
CMRR
CMVR
A
OL
V
OUT
BW
SR
PSRR
V
S
V/μsec R
L
= 10kΩ, C
L
= 50pF
dB
±3.3V to ±5.5V
V
V
μA
Split Supply
Single Supply
V
S
= ±5V
I
S
Note
1:
Characterized; not 100% tested.
©
2005 Microchip Technology Inc.
DS21481C-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
