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1N4150 参数 Datasheet PDF下载

1N4150图片预览
型号: 1N4150
PDF下载: 下载PDF文件 查看货源
内容描述: 硅开关二极管DO- 35玻璃封装 [Silicon Switching Diode DO-35 Glass Package]
分类和应用: 二极管开关
文件页数/大小: 1 页 / 76 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
   
Silicon Switching Diode
1N4150
Applications
1
1N
Nor1
or
1N4150-1
1N
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
DO-35 Glass Package
La dDa .
e
i
0. 1 - . 2 "
0 80 0 2
0. 5 - . 5 m m
4 80 5 8
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
1.0"
Length
for problem free solderability
25.4 mm
m m
(Min.)
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/231
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings
0.120-.200"
3.05-5.08-
Dia.
0.06-0.09"
15 - . 8m m
. 322
M a xi u m Ra ti g s
m
n
Pea k I
nvers e Volta g e
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t
peak
= 1 sec.)
BKC Power Dissipation T
L
=50
o
C, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
El
ectri l Cha ra cteri t cs @ 25
o
C
ca
si
Forw a rd Volta g e Drop @ I = 1.0 m A
F
Forw a rd Volta g e Drop @ I = 10 m A
F
Forw a rd Volta g e Drop @ I = 50 m A
F
Forw a rd Volta g e Drop @ I = 10 0 m
F
Forw a rd Volta g e Drop @ I = 20 0 m A
F
Revers e Lea k a g e Cu rrent @ V
R
= 50 V
Brea k dow n Vola g e @ I = 0 .1 m A
t
r
Ca pa ci nce @ V
R
= 0 V, f = 1m Hz
ta
Revers e Recovery tim e (note 1)
Revers e Recovery tim e (note 2,3)
Forw a rd Recovery tim e (note 4)
Sym bol
V
F
V
F
V
F
V
F
V
F
I
r
PIV
C
T
t
rr
t
rr
V
fr
Sym b o l
PI
V
I
Avg
I
Fdc
I
peak
P
tot
T
Op
T
St
Mi i u m
nm
0 .54
0 .66
0 .76
0 .80
0 .87
75
Va l e
u
75 (M in.)
200
400
0.5
500
-65 to +200
-65 to +200
M a xi u m
m
0 .62
0 .74
0 .86
Unt
i
Volts
mAmps
mAmps
Amp
mWatts
o
C
o
C
Unt
i
Volts
Volts
Volts
Volts
Volts
µA
Volts
pF
nS e c s
nS e c s
nS e c s
0 .92
1.0
0 .1 (10 0 @ 150
2.5
4.0
6.0
10
o
C)
Note 1: Per Method 4031-A with I
F
= I
R
= 10 to 200 mA, R
L
= 100 Ohms,recover to 0.1 If.
Note 2: Per Method 4031-A with I
F
= I
R
= 200 to 400 mA, R
L
= 100 Ohms,recover to 0.1 If.
Note 3: Per Method 4031-A with I
F
= 10 microA, Ir = 1.0 mA, recover to 0.1 mA.
Note 4: Per Method 4026 with I
F
= 200 mA, Ir = 1.0 mA, recover to 0.1 mA.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135