TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
2N718A
2N1613
2N1613L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
30
75
7.0
500
0.5
0.8
1.8
3.0
-55 to +175
Max.
Unit
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)*
2N718A
2N718A
2N1613, L
0 (2)
@ T
C
= +25 C
2N718A
2N1613, L
Operating & Storage Junction Temperature Range
P
T
W
T
J
,
T
stg
Symbol
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Unit
0
2N718A
97
C/W
R
θ
JC
2N1613, L
58
1) Derate linearly 4.57 mW/
0
C for 2N1613, L and 2.85 mW/
0
C for 2N718A for T
A
> +25
0
C
2) Derate linearly 17.2 mW/
0
C for 2N1613, L and 10.3 mW/
0
C for 2N718A for T
C
> +25
0
C
TO-39 (TO-205AD)*
2N1613
TO-5*
2N1613L
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)CEO
V
(BR)CER
I
CBO
I
EBO
Min.
Max.
Unit
Vdc
Vdc
10
10
ηAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10
Ω
Collector-Base Cutoff Current
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
30
50
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