TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/407
Devices
2N3055
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op,
T
stg
Symbol
0
Value
70
100
7.0
7.0
15
6.0
117
-65 to +200
Max.
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
0
C/W
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 34.2 mW/ C for T
A
> +25 C
2) Derate linearly @ 668 mW/
0
C for T
C
> +25
0
C
0
R
θ
JC
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CER
V
(BR)
CEX
I
CEO
I
CEX
I
EBO
Min.
70
80
90
1.0
1.0
1.0
Max.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, R
BE
= 100Ω
Collector-Emitter Breakdown Voltage
V
BE
= -1.5 Vdc, I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
Collector-Emitter Cutoff Current
V
BE
= -1.5 Vdc; V
CE
= 100 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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