TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/370
Devices
2N3442
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Value
140
160
150
7.0
7.0
10
6.0
117
-55 to +200
Max.
1.5
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
Operating & Storage Junction Temperature Range
TO-3* (TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
2)
Derate linearly 668 mW/
0
C for T
C
> 25
0
C
0
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CER
V
(BR)
CEX
I
CEX
I
EBO
Min.
140
150
160
1.0
1.0
Max.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
OFF CHARACTERISTICS
Collector-Emitter Voltage
I
C
= 3.0 Adc
Collector-Emitter Breakdown Voltage
I
C
= 1.5 Adc, R
BE
= 100
Ω
Collector-Emitter Breakdown Voltage
I
C
= 1.5 Adc, V
EB
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 140 Vdc, V
EB
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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