TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/408
Devices
2N3715
2N3716
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
0
2N3715
60
80
2N3716
80
100
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
A
= 25
0
C
@ T
C
=100
0
C
Operating & Storage Junction Temperature Range
7.0
4.0
10
5.0
85.7
-65 to +200
Max.
1.17
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.57 mW/ C for T
A
>25 C
2) Derate linearly 0.857 W/
0
C for T
C
>100
0
C
*See Appendix A for
Package Outline
0
R
θ
JC
0
TO-3* (TO-204AA)
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc
V
CB
= 100 Vdc
Emitter-Base Breakdown Voltage
V
EB
= 7.0 Vdc
Collector-Emitter Cutoff Current
V
BE
= 1.5 Vdc, V
CE
= 60 Vdc
V
BE
= 1.5 Vdc, V
CE
= 80 Vdc
2N3715
2N3716
2N3715
2N3716
V
(BR)
CEO
60
80
10
10
1.0
1.0
1.0
Vdc
I
CBO
µAdc
I
EBO
2N3715
2N3716
I
CEX
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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