2N3762L 参数 Datasheet PDF下载

TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/396

Devices

2N3762

2N3762L

2N3763

2N3763L

2N3764

2N3765

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

V

CEO

V

CBO

V

EBO

I

C

2N3762*

2N3764

40

40

5.0

1.5

2N3763*

2N3765

60

60

Unit

Vdc

Vdc

Vdc

Adc

TO-39* (TO-205AD)

2N3762, 2N3763

2N3762*

1

2N3763*

Total Power Dissipation @ T

A

= +25

0

C

Operating & Storage Junction Temp. Range

P

T

T

op

,

T

stg

Symbol

1.0

2N3764

2

2N3765

0.5

W

0

-55 to +200

Max.

C

THERMAL CHARACTERISTICS

Characteristics

TO-5*

2N3762L, 2N3763L

Unit

2N3762*

2N3763*

2N3764

2N3765

TO-46* (TO-206AB)

2N3764, 2N3765

*See appendix A for

package outline

0

Thermal Resistance Junction-to-Case

60

88

C/W

R

θ

JC

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly at 5.71 mW/

0

C for T

A

> +25

0

C

2) Derate linearly at 2.86 mW/

0

C for T

A

> +25

0

C

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I

C

= 10 mAdc

Collector-Base Cutoff Current

V

CB

= 20 Vdc

V

CB

= 30 Vdc

V

CB

= 40 Vdc

V

CB

= 60 Vdc

2N3762, 2N3764

2N3763, 2N3765

2N3762, 2N3764

2N3763, 2N3765

2N3762, 2N3764

2N3763, 2N3765

V

(BR)

CEO

40

60

100

100

10

10

Vdc

I

CBO

ηAdc

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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