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2N3810 参数 Datasheet PDF下载

2N3810图片预览
型号: 2N3810
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管双 [PNP SILICON DUAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 310 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
LEVELS
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
One
Section
1
Total Power Dissipation
@ T
A
= +25°C
P
T
T
J
, T
stg
200
Value
60
60
5.0
50
Both
Sections
2
350
mW
°C
TO-78
Unit
Vdc
Vdc
Vdc
mAdc
Operating & Storage Junction Temperature Range
-65 to +200
NOTES:
1. Derate linearly 1.143mW/°C for T
A
> +25°C (one section)
2. Derate linearly 2.000mW/°C for T
A
> +25°C (both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100μAdc
Collector-Base Cutoff Current
V
CB
= 50Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 5.0Vdc
Symbol
Min.
Max.
Unit
V
(BR)CEO
60
Vdc
U - Package
ηAdc
μAdc
ηAdc
μAdc
I
CBO
10
10
10
10
I
EBO
T4-LDS-0118 Rev. 2 (110152)
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