TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/502
Devices
2N6058
2N6059
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
0
@ T
C
= +25
0
C
@ T
C
= +100
0
C
Operating & Storage Junction Temperature Range
2N6058 2N6059
80
100
80
100
5.0
0.2
12
150
75
-55 to +175
Max.
1.0
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
0
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
TO-3*
(TO-204AA)
*See appendix A for
package outline
1)
Derate linearly at 1.0 W/ C above T
C
> +25 C
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
0
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc
V
CE
= 50 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
2N6058
2N6059
2N6058
2N6059
2N6058
2N6059
V
(BR)
CEO
80
100
1.0
1.0
0.5
0.5
2.0
Vdc
I
CEO
mAdc
I
CEX
mAdc
I
EBO
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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