TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN DARLINGTON POWER
SILICON TRANSISTOR
Qualified per MIL-PRF-19500/539
DEVICES
LEVELS
2N6300
2N6301
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
C
= +0°C
(1)
@ T
C
= +100°C
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
j
, T
stg
2N6300
60
60
5.0
120
8.0
75
32
-55 to +200
2N6301
80
80
Unit
Vdc
Vdc
Vdc
mAdc
Adc
W
°C
TO-66 (TO-213AA)
Operating & Storage Junction Temperature Range
Note:
1.
Derate linearly 0.428W/°C above T
C
> 0°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Voltage
IC = 100mAdc
Collector-Emitter Cutoff Current
V
CE
= 30Vdc
V
CB
= 40Vdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= -1.5Vdc
V
CE
= 80Vdc, V
BE
= -1.5Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
2N6300
2N6301
2N6300
2N6301
2N6300
2N6301
V
(BR)CEO
I
CEO
60
80
0.5
0.5
0.5
0.5
2.0
Vdc
mAdc
I
CEX
mAdc
I
EBO
mAdc
T4-LDS-0171 Rev. 1 (101129)
Page 1 of 3
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