TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
DEVICES
LEVELS
2N6849
2N6849U
JAN
JANTX
JANTXV
JANS
Symbol
V
DS
V
GS
Value
-100
± 20
-6.5
-4.1
25
(1)
0.3
(2)
-55 to +150
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
2N6849
TO-205AF
(formerly TO-39)
SEE FIGURE 1
Unit
Vdc
-4.0
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
T
C
= +25°C
Continuous Drain Current
T
C
= +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
Note:
(1) Derated Linearly by 0.2 W/°C for T
C
> +25°C
(2) V
GS
= -10Vdc, I
D
= -4.1A
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= -1mAdc
Gate-Source Voltage (Threshold)
V
DS
≥
V
GS
, I
D
= -0.25mA
V
DS
≥
V
GS
, I
D
= -0.25mA, T
j
= +125°C
V
DS
≥
V
GS
, I
D
= -0.25mA, T
j
= -55°C
Gate Current
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V, T
j
= +125°C
Drain Current
V
GS
= 0V, V
DS
= -80V
V
GS
= 0V, V
DS
= -80V, T
j
= +125°C
Static Drain-Source On-State Resistance
V
GS
= -10V, I
D
= -4.1A pulsed
V
GS
= -10V, I
D
= -6.5A pulsed
T
j
= -125°C
V
GS
= -10V, I
D
= -4.1A pulsed
Diode Forward Voltage
V
GS
= 0V, I
D
= -6.5A pulsed
Symbol
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
r
DS(on)1
r
DS(on)2
r
DS(on)3
V
SD
Min.
-100
-2.0
-1.0
-5.0
Max.
I
D1
I
D2
P
tl
R
ds(on)
T
op
, T
stg
Vdc
±100
±200
-25
-0.25
0.3
0.32
0.54
-4.3
nAdc
µAdc
mAdc
Ω
Ω
Ω
Vdc
2N3849U
18 PIN LCC
SEE FIGURE 2
T4-LDS-0009 Rev. 2 (091456)
Page 1 of 4
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