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BAS70-05 参数 Datasheet PDF下载

BAS70-05图片预览
型号: BAS70-05
PDF下载: 下载PDF文件 查看货源
内容描述: SCHOTTKYarray系列 [SCHOTTKYarray SERIES]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 125 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号BAS70-05的Datasheet PDF文件第2页  
BAS40
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
and
BAS70
SCHOTTKYarray™ SERIES
DESCRIPTION
Various configurations of Schottky barrier's diodes in SOT-23 packages are
provided for general-purpose use in high-speed switching, mixers and
detector applications. They may also be used for signal terminations at the
board level. This helps maintain signal integrity and counteract the
transmission-line effects with (PC) board traces by clamping over/and
undershoot from signal reflections with the schottky-low-threshold voltages.
This type of termination also does not depend on matching the transmission
line characteristic impedance, making it particularly useful where line
impedance is unknown or a variable. This method of termination can
control distortions of clock, data, address, and control lines as well as
provides a stabilizing effect on signal jitter. It can also significantly reduce
power consumption compared to standard resistor- based termination methods.
FEATURES
Protects from line to V
CC
and line to ground
Clamps within one forward diode threshold voltage
Low forward voltage and reverse recovery
characteristics
Bidirectional-low-forward available with “-04” suffix (Figure 2)
SOT-23 Surface Mount packaging for small foot print
PACKAGING
Tape & Reel EIA Standard 481
7 inch reel 3,000 pieces
13 inch reel 10,000 pieces
MAXIMUM RATINGS
Operating Temperatures: -55 C to +125 C
Storage Temperature: -55
0
C to +150
0
C
Power dissipation at T
amb
= 25
0
C is 200 mW
Forward Continuous Current at T
amb
= 25
0
C is 200 mA
Surge Forward Current At t
p
< 1 s, T
amb
= 25
0
C is 600 mA
0
0
MECHANICAL
Molded SOT-23 Surface Mount
Weight: .008 grams (approximate)
Body Marked with device number
ELECTRICAL CHARACTERISTICS PER DIODE @ 25
0
C Unless otherwise specified
Repetitive
Peak Reverse
Voltage
DEVICE
TYPE
DEVICE
FIGURE
MARKING
V
RRM
(VOLTS)
TYP
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS70
BAS70-04
BAS70-05
BAS70-06
43
44
45
46
73
74
75
76
1
2
3
4
1
2
3
4
40
40
40
40
70
70
70
70
V
(BR)R
(VOLTS)
MIN
40
40
40
40
70
70
70
70
Reverse
Breakdown
Voltage
Tested with
10µA Pulse
Leakage Current
Pulse test
tp < 300µs @
For BAS40
V
R
= 30 V
For BAS70
V
R
= 50 V
I
R
(nA)
TYP
20
20
20
20
20
20
20
20
MAX
100
100
100
100
100
100
100
100
I
F
=1mA
380
380
380
380
410
410
410
410
1000
1000
1000
1000
I
F
=15mA I
F
=40mA
1000
1000
1000
1000
MAX
5
5
5
5
5
5
5
5
MAX
430
430
430
430
430
430
430
430
MAX
5
5
5
5
2
2
2
2
Forward Voltage Pulse Test
tp < 300µs
at I
F
= 1 mA
at I
F
= 40 mA
Reverse
Recovery
Time from
I
F
= 10 mA
through
I
R
=10mA to
I
R
=1mA
t
rr
(ns)
Thermal
Resistance
Junction to
Ambient Air
Capacitance
At V
R
= 0V
F = 1 MHz
C
tot
V
F
(mV)
R
thJA
(K/W)
pF
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