TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices
2N6350
2N6351
2N6352
2N6353
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CER
V
CBO
V
EBO
I
B
I
C
2N6350
2N6352
80
80
2N6351
2N6353
150
150
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
12
6.0
0.5
5.0
10
(1)
2N6350
2N6351
Total Power Dissipation @ T
A
= 25
0
C
@ T
C
= 100
0
C
Operating & Storage Junction Temperature Range
P
T
T
J
,
T
stg
Symbol
R
θ
JC
2N6352
2N6353
W
W
0
C
2N6350, 2N6351
TO-33*
1.0
(2)
2.0
(4)
5.0
(3)
25
(5)
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Applies for t
p
≤
10 ms, Duty cycle
≤
50%
2) Derate linearly @ 5.72 mW/
0
C above T
A
> 25
0
C
3) Derate linearly @ 50 mW/
0
C above T
C
> 100
0
C
4) Derate linearly @ 11.4 mW/
0
C above T
A
> 25
0
C
5)
Derate linearly @ 250 mW/
0
C above T
C
> 100
0
C
2N6350
2N6351
20
2N6352
2N6353
4.0
Unit
0
C/W
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 25 mAdc, R
B1E
= 2.2 kΩ, R
B2E
= 100
Ω
2N6350, 2N6352
2N6351, 2N6353
V
(BR)
CER
80
150
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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