2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125°C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55°C
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125°C
Drain Current
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
Drain Current
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
= 80 V
= 160 V
= 320 V
= 400 V
= 80 V, T
J
= +125 °C
= 160 V, T
J
= +125 °C
= 320 V, T
J
= +125 °C
= 400 V, T
J
= +125 °C
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
Symbol
Min.
Max.
Unit
V
(BR)DSS
100
200
400
500
2.0
1.0
4.0
5.0
±100
±200
V
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
V
nA
I
DSS1
25
µA
I
DSS2
0.25
mA
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 8.0 A pulsed
V
GS
= 10 V, I
D
= 5.5 A pulsed
V
GS
= 10 V, I
D
= 3.0 A pulsed
V
GS
= 10 V, I
D
= 2.5 A pulsed
Static Drain-Source On-State Resistance
T
J
= +125°C
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= 8.0 A pulsed
V
GS
= 0 V, I
D
= 5.5 A pulsed
V
GS
= 0 V, I
D
= 3.0 A pulsed
V
GS
= 0 V, I
D
= 2.5 A pulsed
r
DS(on)1
0.18
0.40
1.00
1.50
0.195
0.420
1.100
1.600
Ω
r
DS(on)2
Ω
2N6796
2N6798
2N6800
2N6802
2N6796
2N6798
2N6800
2N6802
r
DS(on)3
0.35
0.75
2.40
3.50
1.5
1.4
1.4
1.4
Ω
V
SD
V
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 3 of 9
MICROSEMI [ MICROSEMI CORPORATION ]
