JTDB75
75 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDB75 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55AW, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
220
Device Dissipation @25°C
2
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
55
Emitter to Base Voltage (BV
ebo
)
3.5
Collector Current (I
c
)
8.0
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 960-1215 MHz
Vcc = 36 Volts
PW = 10
µsec,
Note 1
DF = 40%, Note 1
F = 1090 MHz
MIN
75
15
7.0
8.2
40
3:1
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
h
FE
θjc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 30 mA
Vce = 5V, Ic = 1A
3.5
55
20
V
V
100
0.8
°C/W
NOTE 1: At rated output power and pulse conditions
2. At rated pulse conditions
.
Rev A: Dec 2009
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN
INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Microsemi 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
MICROSEMI [ MICROSEMI CORPORATION ]
