VRF151G
50V, 300W, 175MHz
RF POWER VERTICAL MOSFET
The VRF151G is designed for broadband commercial and military applications
at frequencies to 175MHz. The high power, high gain, and broadband perfor-
mance of this device make possible solid state transmitters for FM broadcast
or TV channel frequency bands.
FEATURES
• Improved Ruggedness V
(BR)DSS
= 170V
• 300W with 16dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• RoHS Compliant
• 5:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF151G
Maximum Ratings
Symbol
V
DSS
I
D
V
GS
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device dissipation @ T
C
= 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: T
C
=25°C unless otherwise specified
VRF151G
170
36
±40
500
-65 to 150
200
Unit
V
A
V
W
°C
Static Electrical Characteristics
Symbol
V
(BR)DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Parameter
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 100mA)
On State Drain Voltage (I
D(ON)
= 10A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= 100V, V
GS
= 0V)
Gate-Source Leakage Current (V
DS
= ±20V, V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 10A)
Gate Threshold Voltage (V
DS
= 10V, I
D
= 100mA)
5.0
2.9
3.6
4.4
Min
170
Typ
180
2.0
3.0
1.0
1.0
Max
Unit
V
mA
μA
mhos
V
Thermal Characteristics
Symbol
R
θ
JC
Characteristic
Junction to Case Thermal Resistance
Min
Typ
Max
0.35
Unit
°C/W
050-4938 Rev G 11-2009
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
MICROSEMI [ MICROSEMI CORPORATION ]
