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XR1001 参数 Datasheet PDF下载

XR1001图片预览
型号: XR1001
PDF下载: 下载PDF文件 查看货源
内容描述: 33.0-40.0 GHz的砷化镓MMIC接收器 [33.0-40.0 GHz GaAs MMIC Receiver]
分类和应用: 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
文件页数/大小: 8 页 / 1417 K
品牌: MIMIX [ MIMIX BROADBAND ]
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33.0-40.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
Features
Sub-Harmonic Receiver
9.0 dB Conversion Gain
4.0 dB Noise Figure
12.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
R1001
R1001
General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC receiver has a small
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0
dB image rejection across the band. The device is a two stage LNA
followed by a pair of sub-harmonic mixers, configured to form an image
reject mixer which requires an LO at 15.5-21.5 GHz. The image reject
mixer eliminates the need for a bandpass filter after the LNA to remove
thermal noise at the image frequency. The use of a sub-harmonic mixer
makes the provision of the LO easier than for fundamental mixers at
these frequencies. I and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband’s 0.15
µm
GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
70 mA
+0.3 VDC
0 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21) (USB/LSB)
2
LO Input Drive (P
LO
)
Image Rejection (USB/LSB)
2
Noise Figure (NF)
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)
1
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
(1) Measured using constant current.
(2) Min/Max limits over 33.0-39.5 GHz
Page 1 of 8
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
mA
Min.
34.0
33.0
15.5
DC
-
3.0/3.0
+10.0
10.0/6.0
-
-
-
-
-1.0
-
Typ.
-
-
-
-
18.0
9.0/9.0
+12.0
14.0/12.0
4.0
45.0
-13.0
+3.0
-0.5
30
Max.
40.0
40.0
21.5
3.0
-
-
+14.0
-
-
-
-
+5.5
0.0
60
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.