MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
T
stg
Parameter
Storage temperature
BCR16A
—
Weight (Typical value)
BCR16B
BCR16C
BCR16E
—
—
V
iso
Soldering temperature
Mounting torque
Isolated voltage
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, T
a
=25°C, AC 1 minute, T
2
Terminal to base
Test conditions
Ratings
–20 ~ +125
3.0
8.5
8.5
9.5
230
30
2.94
1500
°C
kg·cm
N·m
V
g
Unit
°C
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-b)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, T
b
=25°C (BCR16E only), I
TM
=25A , Instantaneous
measurement
Limits
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
1.6
1.5
1.5
1.5
30
30
30
—
1.2
2.5
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
—
—
0.2
—
—
V3
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Symbol
R
Min.
—
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
8
400
L
10
V/µs
R
—
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–8A/ms
3. Peak off-state voltage
V
D
=400V
L
10
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
10
500
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
