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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→
IN2
→
IN3
→
INPUT
1
2
3
18
→
O1
17
→
O2
16
→
O3
15
→
O4
14
→
O5
13
→
O6
12
→
O7
11
→
O8
10
DESCRIPTION
M63806P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
IN4
→
4
IN5
→
5
OUTPUT
IN6
→
6
FEATURES
q
Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BV
CEO
≥
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85°C)
IN7
→
IN8
→
GND
7
8
9
→
NC
Package type
18P4G(P)
NC
1
20
NC
IN1
→
2
19
→
O1
18
→
O2
17
→
O3
16
→
O4
15
→
O5
14
→
O6
13
→
O7
12
→
O8
11
→
NC
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
IN2
→
3
IN3
→
4
IN4
→
5
INPUT
IN5
→
6
IN6
→
7
IN7
→
8
IN8
→
9
OUTPUT
FUNCTION
The M63806P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
GND
10
NC : No connection
20P2N-A(FP)
Package type
20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
INPUT
2.7K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
Ω
Jan. 2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
