MITSUBISHI RF POWER MODULE
M68732SL
SILICON MOS FET POWER AMPLIFIER, 330-380MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2
26.6±0.2
21.2±0.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.5±0.1
5
1
2
3
4
1
4
5
0.45
6±1
13.7±1
18.8±1
23.9±1
PIN:
1
P
in
: RF INPUT
2
V
GG
: GATE BIAS SUPPLY
3
V
DD
: DRAIN BIAS SUPPLY
4
P
O
: RF OUTPUT
5
GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise noted)
Symbol
V
DD
V
GG
P
in
P
O
T
C (OP)
T
stg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Storage temperature
Conditions
V
GG
≤3.5V,
Z
G
=Z
L
=50Ω
f=330-380MHz, Z
G
=Z
L
=50Ω
f=330-380MHz, Z
G
=Z
L
=50Ω
f=330-380MHz, Z
G
=Z
L
=50Ω
Ratings
9.2
4
70
10
-30 to +100
-40 to +110
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, Z
G
=Z
L
=50Ω unless otherwise noted)
Symbol
f
P
O
η
T
2f
O
ρ
in
-
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Stability
Load VSWR tolerance
Z
G
=50Ω, V
DD
=4-9.2V,
Load VSWR<4:1
V
DD
=9.2V, P
in
=50mW,
P
O
=7W (V
GG
adjust), Z
L
=20:1
Parameter
Test conditions
Limits
Min
330
7
45
Max
380
Unit
MHz
W
%
dBc
-
-
-
V
DD
=7.2V,
V
GG
=3.5V,
P
in
=50mW
-25
4
No parasitic oscillation
No degradation or
destroy
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
