June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4951A/MGF4952A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
MGF4951A : NFmin. = 0.40dB (Typ.)
MGF4952A : NFmin. = 0.60dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
Fig.1
APPLICATION
C to K band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V
DS
=2V , I
D
=10mA
ORDERING INFORMATION
Tape & reel
3000pcs./reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
GDO
V
GSO
I
D
PT
T
ch
T
stg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
(Ta=25°C )
Ratings
-4
-4
60
50
125
-65 to +125
(Ta=25°C )
Unit
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Synbol
V
(BR)GDO
I
GSS
I
DSS
V
GS(off)
gm
Gs
NFmin.
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
Test conditions
MIN.
I
G
=-10µA
V
GS
=-2V,V
DS
=0V
V
GS
=0V,V
DS
=2V
V
DS
=2V,I
D
=500µA
V
DS
=2V,I
D
=10mA
V
DS
=2V,
I
D
=10mA
MGF4951A
f=12GHz
MGF4952A
Limits
TYP.
--
--
--
--
70
12.0
0.40
0.60
Unit
MAX
--
50
60
-1.5
--
--
0.50
0.80
V
µA
mA
V
mS
dB
dB
dB
-3
--
15
-0.1
--
11.0
--
--
MITSUBISHI
(1/5)
June/2004
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
