2.10
3
rd
Generation DIP and Mini-DIP-IPM
(Dual-in-line
Package Intelligent Power Modules)
Features:
•
Employing 5
th
generation planar IGBT chips with 0.6µm design rule
or CSTBT™ technology with superior loss performance
•
Ultra compact dual or single-in-line transfer mold package
(compatible with 2
nd
generation)
•
Including driver and protection circuitry (UV, SC)
•
DIP-IPM with reduction of thermal resistance by 20%
•
2500V
rms
isolation voltage
•
High-active interface logic for direct connection to a 3V or 5V MCU
•
Highest reliability and optimised EMI performance
•
Available from 3A to 50A / 600V for motor ratings from 0.1kW to 3.7kW
•
Optional with open emitter topology for vector control
•
All Mitsubishi DIP and Mini-DIP-IPMs have lead-free terminals
•
From January 2006 onwards, all DIP and Mini-DIP-IPMs will
be supplied with completely lead-free technology
Line-up DIP, Mini-DIP & SIP-IPM
2.
Type
Isolation Voltage
(V)
V
CES
(V)
Motor Rating (kW)
0.1
0.2
0.4
0.75
1.5
PS21065
2.2
PS21067
3.7
PS21069
Super-DIP
DIP
2500
Mini-DIP
PS21661-FR
PS21661-RZ
600
PS21562-P
PS21562-SP*
PS21563-P
PS21563-SP*
PS21864-P
PS21564-P
PS21564-SP*
PS21865-P
PS21867-P
PS21869-P
SIP
* Open Emitter Topology
Electrical Characteristics
Type Number
Thermal & Mechanical
Characteristics
V
CES
(V)
600
600
600
600
600
600
600
600
600
600
600
600
600
600
Applicable
Motor Ratings
(kW)
0.2
0.4
0.75
0.75
1.5
2.2
3.7
0.2
0.4
0.75
1.5
2.2
3.7
0.1
I
C
(A)
5
10
15
15
20
30
50
5
10
15
20
30
50
3
f
C
(kHz)
PS21562-P
PS21563-P
PS21564-P
PS21864-P
PS21865-P
PS21867-P
PS21869-P
PS21562-SP
PS21563-SP
PS21564-SP
PS21065
PS21067
PS21069
PS21661-RZ/-FR
Typ.
Max.
Mini-DIP-IPM 600 Volt
20
2500
1.6
2.1
1.20
0.30 0.40 1.30
20
2500
1.6
2.1
1.20
0.30 0.40 1.40
20
2500
1.45
1.95
1.20
0.30 0.40 1.50
DIP-IPM 600 Volt
20
2500
1.7
2.2
1.50
0.30 0.50 1.40
20
2500
1.6
2.1
1.30
0.30 0.40 1.60
20
2500
1.6
2.1
1.30
0.30 0.40 1.70
20
2500
1.5
2.0
1.30
0.30 0.40 2.00
Mini-DIP-IPM 600 Volt With Open Emitter Topology
20
2500
1.6
2.1
1.20
0.30 0.40 1.30
20
2500
1.6
2.1
1.20
0.30 0.40 1.40
20
2500
1.45
1.95
1.20
0.30 0.40 1.50
Super-DIP-IPM 600 Volt With Open Emitter TopologySIP-IPM 600 Volt
20
2500
1.6
2.1
1.30
0.30 0.40 1.60
20
2500
1.6
2.1
1.30
0.30 0.40 1.70
20
2500
1.5
2.0
1.30
0.30 0.40 2.00
SIP-IPM 600 Volt
15
2500
1.6
2.15
0.85
0.20 0.35 1.00
Isolation
Voltage
(V)
V
CE(sat)
@ T
j
=25°C
(V)
Typical Switching Times
t
on
t
rr
t
c(on)
t
off
t
c(off)
(µs) (µs) (µs) (µs) (µs)
0.50
0.50
0.50
0.50
0.50
0.50
0.65
0.50
0.50
0.50
0.50
0.50
0.65
0.55
IGBT
R
th(j-f)
(°C/W)
6.0
5.0
4.5
2.30
1.90
1.65
1.42
6.0
5.0
4.5
1.90
1.65
1.42
9.0
Diode
R
th(j-f)
(°C/W)
6.5
6.5
6.5
3.2
3.0
3.0
2.0
6.5
6.5
6.5
2.85
2.55
2.30
9.0
Package-
No.
D4
D4
D4
D3
D3
D3
D3
D5
D5
D5
D6*
D6*
D6*
SIP1
* Package drawing D6 see under 2.8. 1200V DIP-IPM, p. 50
54
Power Devices General Catalogue 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
