MITSUBISHI TRANSISTOR MODULES
QM300DY-24
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
500
COLLECTOR CURRENT I
C
(A)
400
DC CURRENT GAIN h
FE
I
B
=6.0A
I
B
=3.0A
10
4
7
5
3
2
10
3
7
5
3
2
V
CE
=5.0V
300
200
0A
I
B
=2.
.0A
I
B
=1
I
B
=0.5A
V
CE
=2.8V
100
T
j
=25°C
0
1
2
3
4
5
V
CE
(V)
0
10
2
7
5
3
T
j
=25°C
2
T
j
=125°C
10
1
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
BASE CURRENT I
B
(A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
1.8
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
10
0
V
BE(sat)
V
CE(sat)
V
CE
=2.8V
T
j
=25°C
2.2
2.6
3.0
3.4
V
BE
(V)
I
B
=6A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
3.8
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
I
C
=300A
4
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
t
on
, t
s
, t
f
(µs)
10
2
7
5
3
2
10
1
7
5
3
2
V
CC
=600V
I
B1
=–I
B2
=6A
t
s
3
SWITCHING TIME
I
C
=200A
2
t
f
I
C
=100A
1
T
j
=25°C
T
j
=125°C
0
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
7
5
3
T
j
=25°C
t
on
2
T
j
=125°C
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT I
B
(A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
